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http://dx.doi.org/10.17576/jsm-2019-4806-01
Silicon Nanohole Arrays Fabricated by Electron Beam Lithography and
Reactive Ion Etching
(Fabrikasi
Lubang Nano Silikon
Oleh Litografi Alur Elektron dan
Punaran Ion Reaktif)
LITA RAHMASARI1,2, MOHD FAIZOL ABDULLAH1, AHMAD RIFQI MD ZAIN3,4 & ABDUL
MANAF HASHIM1*
1Malaysia-Japan
International Institute of Technology, Universiti Teknologi Malaysia, Jalan Sultan Yahya Petra, 54100 Kuala Lumpur, Federal Territory, Malaysia
2Faculty of Teacher
Training and Education, Sebelas Maret University, Surakarta, Indonesia
3Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 46300 UKM Bangi, Selangor Darul Ehsan, Malaysia
4Harvard John A Paulson, School of Engineering and Applied Science, Harvard
University, Cambridge, MA, United States of America
Diserahkan: 16 Julai 2018/Diterima: 15 November 2018
ABSTRACT
The fabrication of
silicon nanohole (SiNH)
using a combination of electron beam lithography (EBL)
and reactive ion etching (RIE) processes is reported. The
optimum exposure dose of EBL process was found to be in the
range of 210-240 μC/cm2 due
to small enlargement of hole diameter after pattern development process. The
anisotropic etching and isotropic etching was achieved at low and high reaction
pressures, respectively. As expected, the etching rate increase with time and RF power.
A relatively smooth and well-defined NH has been obtained at RF power
of 100 W and reaction pressure of 0.08 Torr, which is
suitable to be applied for optical waveguide.
Keywords: Electron beam
lithography; reactive ion etching; silicon nanohole
ABSTRAK
Fabrikasi lubang nano silikon (SiNH) menggunakan gabungan proses litografi alur elektron (EBL) dan punaran ion reaktif (RIE) dilaporkan. Dos pendedahan proses EBL yang optimum telah dijumpai dalam julat 210-240 μC/cm2 kerana pembesaran diameter lubang yang kecil selepas proses pembangunan corak. Punaran anisotropik dan punaran isotropik masing-masing telah diperoleh pada tekanan reaksi yang rendah dan yang tinggi. Seperti yang dijangkakan, kadar punaran meningkat dengan masa dan kuasa RF. NH yang secara relatifnya licin dan bagus takrifannya telah diperoleh pada kuasa RF 100 W dan tekanan reaksi 0.08 Torr, sesuai untuk diaplikasi untuk pandu gelombang optik.
Kata kunci: Litografi alur elektron; lubang nano silikon; punaran ion reaktif
RUJUKAN
Abd Rahman, S.F., Kasai, S.
& Hashim, A.M. 2013. Fabrication and transport
performance characterization of chemically-doped three-branch junction graphene
device. Sains Malaysiana 42(2): 187-192.
Awad, Y., Lavalle, E., Lau, K.M., Beauvais, J., Drouin, D., Turcotte, D., Yang, P. & Kelkar,
P. 2004. Array of holes fabricated by electron-beam lithograpy combined with image reversal process using nickel pulse reversal plating. J.
Vac. Sci. Technol A. 22(3): 1040-1043.
Cong, C., Junus, W., Shen, Z. & Yu, T. 2009. New colloidal
lithographic nanopatterns fabricated by combining
pre-heating and reactive ion etching. Nanoscale Res. Lett. 4(11):
1324-1328.
Escobedo, C. 2013.
On-chip nanohole array based sensing: A review. Lab
Chip 13(13): 2445-2463.
Jensen, H., Gardeniers, H., De Boer, M., Elwenspoek,
M. & Fluitman, J. 1996. A survey on the reactive
ion etching of silicon in microtechnology. J.
Micromechanics Microengineering6(1): 14-28.
Jiao, Y., de Vries, T., Unger., R.S., Ambrosius,
H., Radu, C., Arens, M.,
Smit, M. & van der Tol, J. 2015. Vertical and
smooth single-step reactive ion etching process for InP membrane waveguides. J. Electrochem. Soc. 162(8):
E90-E95.
Mat Hussin,
M.R., Ramli, M.M., Wan Sabli,
S.K., Md Nasir, I., Syono,
M.I., Wong, H.Y. & Zaman, M. 2017. Fabrication and characterization of
graphene-on-silicon Schottky diode for advanced power
electronic design. Sains Malaysiana46(7): 1147-1154.
Meng, X., Depauw, V. & Gomard, G. 2014.
Micrometer-thin crystalline-silicon solar cells integrating numerically
optimized 2-D photonic crystals. IEEE J. Photovolt.
20(4): 215-223.
Seo, E., Choi, B.K. &
Kim, O. 2000. Determination of proximity effect parameters and the shape bias
parameter in electron beam lithography. Microelectron Eng. 53: 305-308.
Tiron, R. & Mollard, L. 2007. Ultrahigh-resolution pattern using
electron beam lithography HF wet etching. J. Vac. Sci. Technol. B 4(25):
1147-1151.
Zou, Y., Chakravarty, S., Chung, C.J., Xu, X. & Chen, R.T. 2018.
Mid-infrared silicon waveguides and devices. Photon. Res. 4(6): 254-276.
*Pengarang untuk surat-menyurat; email: abdmanaf@utm.my
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