Sains Malaysiana 48(6)(2019): 1295–1300

http://dx.doi.org/10.17576/jsm-2019-4806-18

Kesan Sistematik Modifikasi Dielektrik dengan Asid Fosfonik Alkil Ekalapisan terhadap Prestasi Transistor Filem Nipis Organik Saluran-N

(The Effect of Systematic Modification of Phosphonic Acid Alkyl Dielektric with monolayer on the Performance of Organic Thin Film Transistors-N Channel)

MOHD ZULHAKIMI ABDUL RAZAK¹, MOHD FARHANULHAKIM MOHD RAZIP WEE¹, MUHAMAD RAMDZAN BUYONG¹, SAWAL HAMID MD ALI², TEH CHIN HOONG³, JUMADI ABDUL SUKOR⁴ & AHMAD GHADAFI ISMAIL^1*

¹Institut Kejuruteraan Mikro dan Nanoelektronik, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

²Pusat Kejuruteraan Sistem Bersepadu dan Teknologi Termaju, Fakulti Kejuruteraan dan Alam Bina, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

³Pusat PERMATApintar Negara, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

⁴Fakulti Teknologi Kejuruteraan, Universiti Tun Hussein Onn Malaysia, 84600 Panchor, Johor Darul Takzim, Malaysia

Diserahkan: 15 Januari 2019/Diterima: 28 Februari 2019

ABSTRAK

Kajian ini membincangkan tentang kesan panjang rantai karbon pada asid alkil fosfonik ekalapis pengumpulan kendiri terhadap prestasi transistor organik filem nipis saluran-n terbentuk berdasarkan N,N’-ditridekil-3,4,9,10-perilenadikarboximide (PTCDI-C13). Prestasi transistor organik filem nipis tersebut meningkat dengan peningkatan panjang rantai ekalapis pengumpulan kendiri pada dielektrik SiO2. Magnitud mobiliti setinggi 0.3 cm2/Vs dan nisbah arus buka/tutup lebih tinggi daripada 105 telah dicapai. Transistor tersebut adalah calon terbaik untuk menyaingi transistor organik filem nipis pentacene saluran-p untuk menghasilkan litar semikonduktor logam pelengkap teroksida organik (O-CMOS). Prestasi peranti ini tidak bergantung terhadap panjang rantaian alkil apabila diuji di dalam udara ambien.

Kata kunci: Asid fosfonik; ekalapis pengumpulan kendiri; PTCDI; salur-n; transistor filem nipis organic

ABSTRACT

The performance of N,N’-ditridecyl-3,4,9,10-perylenetetracarboxylicdiimide (PTCDI-C13) based n-channel organic thin film transistors with different carbon chain length of alkyl phosphonic acid self-assembled monolayers were investigated and presented in this paper. The study observed an improving trend in the performance of the organic thin film transistor with increasing self-assembled monolayer chain length on SiO2 dielectric. The results show mobility improvement reaching 0.3 cm2/Vs and larger than 105 on/off current ratio. This study suggests these transistors should be a good match with p-channel pentacene organic thin film transistors for an organic complementary metal oxide semiconductor (O-CMOS) circuits. The device has no dependency with the alkyl chain length when tested in ambient air.

Keywords: N-channel; organic thin film transistor; phosphonic acid; PTCDI; self-assembled monolayer

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*Pengarang untuk surat-menyurat; email: ghad@ukm.edu.my